Wafer SiC nke dị sentimita 2, nke nwere ike itinye ihe mkpuchi ọkara SiC nke dị sentimita 6 ma ọ bụ 4, Dia50.8mm
Ojiji nke ihe mkpuchi silicon carbide
Enwere ike kewaa ihe mkpuchi silicon carbide n'ụdị conductive na ụdị semi-insulating dịka resistive si dị. A na-ejikarị ngwaọrụ silicon carbide conductive eme ihe n'ụgbọala eletrik, mmepụta ike fotovoltaic, ụgbọ okporo ígwè transit, ebe data, chaja na akụrụngwa ndị ọzọ. Ụlọ ọrụ ụgbọ ala eletrik nwere nnukwu ọchịchọ maka ihe mkpuchi silicon carbide conductive, ugbu a, Tesla, BYD, NIO, Xiaopeng na ụlọ ọrụ ụgbọ ala ike ọhụrụ ndị ọzọ eme atụmatụ iji ngwaọrụ ma ọ bụ modulu silicon carbide discrete.
A na-ejikarị ngwaọrụ silicon carbide nke nwere ọkara-insulated eme ihe na nkwukọrịta 5G, nkwukọrịta ụgbọ ala, ngwa nchekwa mba, nnyefe data, ụgbọelu na mpaghara ndị ọzọ. Site n'ịkụlite gallium nitride epitaxial oyi akwa na silicon carbide substrate nke nwere ọkara-insulated, enwere ike ime ka gallium nitride epitaxial wafer nke dabeere na silicon bụrụ ngwaọrụ RF microwave, nke a na-ejikarị eme ihe na mpaghara RF, dị ka ihe na-eme ka ike dịkwuo na nkwukọrịta 5G na ihe nchọpụta redio na nchekwa mba.
Mmepụta ngwaahịa silicon carbide substrate gụnyere mmepe akụrụngwa, mmepụta ihe ndị e ji aka rụọ, uto kristal, ịkpụ kristal, nhazi wafer, nhicha na nnwale, na ọtụtụ njikọ ndị ọzọ. Banyere ihe ndị e ji aka rụọ, ụlọ ọrụ Songshan Boron na-enye ihe ndị e ji aka rụọ silicon carbide maka ahịa, ma nweta obere ahịa. Ihe ndị e ji aka rụọ nke ọgbọ nke atọ nke silicon carbide na-anọchite anya na-arụ ọrụ dị mkpa na ụlọ ọrụ ọgbara ọhụrụ, site na mmụba nke ụgbọ ala ike ọhụrụ na ngwa fotovoltaic, ọchịchọ maka silicon carbide substrate ga-ebute ebe mgbanwe.
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