Ngwa RF 12 inch SiC Substrate N ụdị nnukwu arụmọrụ dị elu

12 inch SiC Substrate N ụdị nnukwu arụmọrụ RF ngwa egosipụtara onyonyo

Nkọwa dị mkpirikpi:

Mkpụrụ SiC nke anụ ọhịa 12 na-anọchite anya ọganihu na-agbawa obi na teknụzụ ihe semiconductor, na-enye uru mgbanwe maka ngwa eletrọnịkị ike na ngwa dị elu. Dị ka nnukwu ụlọ ọrụ na-ere ahịa silicon carbide wafer, mkpụrụ nke 12-inch SiC na-enyere akụ na ụba na-enwetụbeghị ụdị ya aka ka ọ na-ejigide uru ihe dị na ya nke njirimara bandgap sara mbara yana ihe ọkụkụ pụrụ iche. E jiri ya tụnyere 6-inch ma ọ bụ obere SiC wafers, ikpo okwu 12-inch na-enyefe mpaghara 300% karịa n'otu wafer, na-abawanye mkpụrụ ọnwụ n'ike n'ike ma na-ebelata ọnụ ahịa nrụpụta maka ngwaọrụ ike. Mgbanwe nha a na-egosipụta mgbanwe akụkọ ihe mere eme nke silicon wafers, ebe mmụba nke dayameta nke ọ bụla wetara mbelata ọnụ ahịa dị ukwuu na nkwalite arụmọrụ. Igwe ọkụ SiC nke anụ ọhịa 12 nke anụ ọhịa dị elu (ihe fọrọ nke nta ka ọ bụrụ 3 × nke silicon) na ike mmebi ubi dị oke egwu na-eme ka ọ baa uru karịsịa maka sistemụ ụgbọ ala eletrik 800V na-esote, ebe ọ na-eme ka kọmpụta ike kọmpat na nke ọma. Na akụrụngwa 5G, ngwa ngwa saturation elektrọn dị elu na-enye ngwaọrụ RF aka ịrụ ọrụ n'ogo dị elu yana mfu dị ala. Ndakọrịta nke mkpụrụ ahụ na akụrụngwa nrụpụta silicon gbanwetụrụ na-emekwa ka nkuchi dị nro site na fabs dị adị, ọ bụ ezie na achọrọ njikwa pụrụ iche n'ihi oke ike SiC (9.5 Mohs). Ka mpịakọta mmepụta na-abawanye, a na-atụ anya na mkpụrụ osisi SiC nke anụ ọhịa 12 ga-abụ ọkọlọtọ ụlọ ọrụ maka ngwa ike dị elu, na-akwọ ụgbọala ọhụrụ n'ofe ụgbọ ala, ume ọhụrụ, na usoro ntụgharị ike mmepụta ihe.

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12 inch Silicon Carbide (SiC) nkọwapụta mkpụrụ
Ọkwa		Mmepụta ZeroMPD Ọkwa (ọkwa Z)	Standard mmepụta Ọkwa(P Ọkwa)		Ngụsị akwụkwọ (D ọkwa)
Dayameta		3 00mm ~ 1305mm
Ọkpụrụkpụ	4H-N	750μm± 15 μm	750μm±25 μm
	4H-SI	750μm± 15 μm	750μm±25 μm
Usoro Wafer		Gbanyụọ axis: 4.0° n'ebe <1120>±0.5° maka 4H-N, On axis: <0001>±0.5° maka 4H-SI
Njupụta Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Nguzogide	4H-N	0.015 ~ 0.024 Ω·cm			0.015 ~ 0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Nhazi Flat nke izizi		{10-10} ±5.0°
Ogologo Flat nke izizi	4H-N	N/A
	4H-SI	Ọkwa
Mwepu ihu		3 mm
LTV/TTV/Ụta/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Isi ike		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra ≤0.5 nm
Edge cracks Site na nnukwu ọkụ ọkụ Efere Hex Site na Ìhè Dị Elu Mpaghara Polytype Site n'ìhè dị elu Ntinye Carbon Anya Anya Silicon dị n'elu Scratches Site na nnukwu ọkụ ọkụ		Ọ dịghị Mpaghara mkpokọta ≤0.05% Ọ dịghị Mpaghara mkpokọta ≤0.05% Ọ dịghị			Ogologo ngụkọta ≤ 20 mm, otu ogologo≤2 mm Mpaghara mkpokọta ≤0.1% Mpaghara mkpokọta≤3% Mpaghara mkpokọta ≤3% Mgbakọ ogologo≤1 × dayameta wafer
Chips Edge Site na Ìhè Dị Elu		Ọnweghị nke anabatara obosara na omimi ≥0.2mm			7 kwere, ≤1 mm nke ọ bụla
(TSD) Ịghasa eriri eriri		≤500 cm-2		N/A
(BPD) Ntugharị ụgbọ elu isi		≤1000 cm-2		N/A
Mmetọ Silicon dị n'elu site na ọkụ ọkụ dị elu		Ọ dịghị
Nkwakọ ngwaahịa		Cassette Multi-wafer ma ọ bụ otu akpa wafer
ndetu:
1 Oke ntụpọ na-emetụta n'elu wafer dum belụsọ mpaghara mwepu ihu. 2Ekwesịrị ịlele ncha ahụ naanị na ihu Si. 3 Data mwepu bụ naanị site na KOH etched wafers.

Atụmatụ igodo

1. Nnukwu Uru: Mkpụrụ SiC nke 12-inch (12-inch silicon carbide substrate) na-enye mpaghara otu-wafer ka ukwuu, na-eme ka a na-emepụta ọtụtụ ibe n'otu wafer, si otú ahụ na-ebelata ọnụ ahịa nrụpụta na ịba ụba mkpụrụ.
2. Ihe na-arụ ọrụ dị elu: Silicon carbide na-eguzogide okpomọkụ dị elu na ike nkwụsị nke ubi na-eme ka 12-inch substrate dị mma maka nnukwu voltaji na ngwa ngwa dị elu, dị ka EV inverters na ngwa ngwa ngwa ngwa.
3. Nhazi ndakọrịta: N'agbanyeghị nnukwu ike ike na nhazi ihe ịma aka nke SiC, 12-inch SiC substrate na-enweta ntụpọ ala dị ala site na nhazi nke ịkpụ na polishing usoro, na-eme ka mkpụrụ ngwaọrụ dịkwuo mma.
4. Nlekọta okpomọkụ kachasị elu: Site na njikwa okpomọkụ dị mma karịa ihe ndị dabeere na silicon, ihe ntanetị nke 12-inch na-ekwu okwu nke ọma na-ekpochapụ okpomọkụ na ngwaọrụ ndị dị elu, na-agbatị ndụ ngwa ngwa.

Ngwa isi

1. Ụgbọ ala eletrik: 12-inch SiC substrate (12-inch silicon carbide substrate) bụ akụkụ bụ isi nke sistemụ eletriki eletrik na-esote ọgbọ, na-eme ka ndị na-eme mgbanwe dị elu na-eme ka ọ dịkwuo elu ma belata oge nchaji.

2. 5G Base Stations: Nnukwu ihe ntinye SiC na-akwado ngwaọrụ RF dị elu, na-egbo ihe ndị ụlọ ọrụ 5G chọrọ maka ike dị elu na obere ọnwụ.

3.Industrial Power Supplies: Na anyanwụ inverters na smart grids, 12-inch mkpụrụ nwere ike idi elu voltaji mgbe ibelata ume ọnwụ.

4.Consumer Eletrọnịkị: chaja ngwa ngwa n'ọdịniihu na akụrụngwa ike data etiti nwere ike ịnakwere 12-inch SiC substrates iji nweta nha kọmpat na arụmọrụ dị elu.

Ọrụ XKH

Anyị bụ ọkachamara na ọrụ nhazi ahaziri ahazi maka 12-inch SiC substrates (12-inch silicon carbide substrates), gụnyere:
1. Dicing & Polishing: Mmebi dị ala, nhazi mkpụrụ osisi dị elu nke dabara na ihe ndị ahịa chọrọ, na-eme ka arụmọrụ ngwaọrụ kwụsiri ike.
2. Nkwado Uto Epitaxial: Ọrụ wafer epitaxial dị elu iji mee ka nrụpụta mgbawa dịkwuo elu.
3. Obere-Batch Prototyping: Na-akwado nkwado R&D maka ụlọ ọrụ nyocha na ụlọ ọrụ, na-ebelata okirikiri mmepe.
4. Nkà na ụzụ Consulting: Ngwọta njedebe na njedebe site na nhọrọ ihe iji hazie njikarịcha, na-enyere ndị ahịa aka imeri nsogbu nhazi SiC.
Ma maka mmepụta oke ma ọ bụ nhazi pụrụ iche, ọrụ ntinye mkpụrụ inch 12 nke SiC dabara na mkpa ọrụ gị, na-eme ka ọganihu teknụzụ nwee ike.